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High Linearity Wideband RF Amplification 20dB 0.02-3G High Performance Medium Power Amplifier Module

High Linearity Wideband RF Amplification 20dB 0.02-3G High Performance Medium Power Amplifier Module

  • Save R 753.54
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Feature:
 
The high-performance InGaP HBT MMIC amplifier uses a Darlington configuration and an active bias network.
The active bias network provides stable current variation with temperature and test process.
Designed to run directly from a 5V supply, there is no need for a buck resistor compared to a typical Darlington amplifier.
The product is designed for high linearity requiring small size and minimal external 5V gain.
 
Description:
 
1. Supply voltage: typical +5V (typical current value 90mA)
2. Gain: Typical value 20dB@2G Input and output impedance: 50 ohms
3. Maximum output power: P1db +20dBm (@2GHz
4. Input signal: <+10dBm (output signal is distorted when input is greater than +10dBm)
5. Bandwidth: 0.02-3GHZ (the gain is slightly different at different frequencies,)
6. Noise figure: 4.1dB@1GHz
 
Package includes:
 
1 x RF Amplifier